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 Light Emitting Diode(InGaAlP)
KLB-16AR
KLB-16AR has a high bright InGaAlP Red LED and has the optimized optical characteristics. DIMENSIONS
Features
* Ultra Wide Viewing Angle * Very Thin Small SMD Package
Applications
* Display * Indicator * Key Pad Back Light
Maximum Ratings Parameter Reverse Voltage Forward current Pulse forward current Power dissipation Storage temperature Soldering Temperature
*2. Soldering time 5 Sec
*2 *1
[ Ta=25C ]
Symbol VR IF IFP PD Topr. Tstg. Tsol.
Ratings 5 25 60 70 -30 ~ +85 -40 ~ +105 260
Unit V mA mA mW C C C
Operating temperature
*1. IFP Measured under duty 1/10 @ 1KHz
Electro-Optical Characteristics Parameter Forward voltage Luminous Intensity Doninant Wave Length Spectral half bandwidth Half angle
[ Ta=25C ]
Symbol VF Iv d
Conditions IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA IF = 10 mA
Min 15 620 -
Typ 2.0 25 20 160
Max 2.2 630 -
Unit V mcd nm nm deg.
1/2
Light Emitting Diode(InGaAlP)
KLB-16AR
Forward current vs. Ambient temperature
(IF) 30
Radiant Intensity vs. Forward current
1.5
Forward current IF(mA)
25
Relative intensity
() 100
20 15 10 5 0
1
0.5
0
20
40
60
80
0
0
5
10
15
20
25
30
(IF) 35
Ambient temperature Ta
Forward current IF
Relative radiant intensity vs. Ambient temperature
1.2 Relative radiant intensity PO 1 Intensity [arb.]
10
Relative intensity vs. Wavelength
0.8 0.6 0.4 0.2
1
0.1
-20
0
20
40
60
80
100 ()
0 500
550
600
650
700
750
800
Ambient temperature Ta
Wave Length[nm]
Forward current vs. Forward voltage
() 30
Radiant Pattern
Angle(deg)
Forward current IF
+6 0
25 20 15 10
+
40
+ 20
0
-20
-4
0
-6 0
50
-80 -100
+100
5 (V) 0.5 1.0 1.5 2.0 2.5 3.0 3.5
+80
0
100
50
50
0
0
100
Forward voltage VF
Relative intensity(%)
2/2


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